PHYSICAL DESIGN EVOLUTION AND IMPLEMENTATION STRATEGIES FOR ADVANCED FINFET AND GATE-ALL-AROUND TECHNOLOGIES: A COMPREHENSIVE REVIEW
Keywords:
Gate-All-Around (GAA) Technology, Physical Design Implementation, Advanced Node Semiconductors, Electronic Design Automation (EDA), Power-Performance-Area (PPA) OptimizationAbstract
The transition from FinFET to Gate-All-Around (GAA) architectures represents a pivotal advancement in semiconductor technology, necessitating significant evolution in physical design methodologies and tools. This comprehensive article review examines the fundamental shifts in design requirements, implementation strategies, and electronic design automation (EDA) solutions essential for successfully adopting GAA technology at advanced nodes. The article analyzes the architectural transformation from FinFET to GAA, exploring the implications for standard cell design, power delivery networks, and routing methodologies. The article discusses critical challenges in physical design implementation, including layout dependencies, electrostatic considerations, and manufacturing constraints, while presenting emerging solutions leveraging machine learning and advanced verification techniques. The article analysis encompasses the latest developments in design tools, methodologies for managing increased complexity, and strategies for optimizing power, performance, and area (PPA) metrics. The findings highlight the significant potential of GAA technology in enabling continued scaling while addressing the growing demands of high-performance computing applications. This article provides valuable insights into current capabilities and future directions, serving as a comprehensive reference for researchers and designers working with advanced semiconductor technologies.
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